The 2N2219A from ST Microelectronics is a through hole NPN silicon planar epitaxial transistor in a jedec TO-39 metal case. This transistor designed as high speed switch and features low leakage currents, low saturation voltage and useful current gain over a wide range of collector currents. Typically suitable for high speed switching application.
Collector to emitter voltage (Vce) is 40V
Collector current (Ic) is 0.6A
Power dissipation (Pd) is 3W
Collector to emitter saturation voltage of 1V at 500mA collector current
DC current gain (hFE) of 35 at 0.1mA collector current